BUZ326 Siemens Semiconductor Group, BUZ326 Datasheet - Page 5

• Manufacturer Part Number: BUZ326
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Semiconductor Group
D
tot
I
tot
D
= ( V
= ( T
10
10
10
10
130
110
100
90
80
70
60
50
40
30
20
10
W
A
-1
0
2
1
0
10
DS
0
C
0
)
)
20
40
10
1
60
C
= 25°C
80
100
10
2
DC
120
t
p = 6.7µs
10 µs
100 µs
1 ms
10 ms
V
T
V
°C
C
DS
10
3
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= ( T
K/W
10
10
10
10
10
= ( t
11
A
-1
-2
-3
9
8
7
6
5
4
3
2
1
0
1
0
C
10
0
)
-7
p
)
20
GS
10
single pulse
-6
p
40
10 V
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
BUZ 326
D = 0.50
07/96
10
T
t
°C
0.20
0.10
0.05
0.02
0.01
p
C
-1
s
160
10
0