BUZ172 Siemens Semiconductor Group, BUZ172 Datasheet - Page 6

• Manufacturer Part Number: BUZ172
• Description: SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
D
DS
=
2 x I
-13
-11
-10
-14
-12
-11
-10
V
-9
-8
-7
-6
-5
-4
-3
-2
-1
-9
-8
-7
-6
-5
-4
-3
-2
-1
A
A
0
0
DS
0
0
)
P
D
tot
-1
p
x R
= 40W
p
= 80 µs
-2
= 80 µs
-2
DS(on)max
-3
-4
l
-4
-5
-6
k
-6
D
= f ( V
-7
-8
-8
i
g
e
c
a
GS
j
h
f
d
b
V
V GS [V]
V
V
a
b
c
d
e
f
g
h
i
j
k -10.0
l -20.0
DS
GS
)
V
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
-11
-10
6
Typ. drain-source on-resistance
R
parameter: V
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
2 x I
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.4
2.0
1.6
1.2
0.8
0.4
0.0
S
0
0
=
V
V
V
V
-4.0
-4.5
-5.0
-5.5
D
GS
GS
GS
GS
a
a
a
a
I
[V] =
[V] =
[V] =
[V] =
x R
D
a
GS
p
-6.0
b
)
-2
-2
= 80 µs,
DS(on)max
b
-6.5
c
c
-7.0
d
-4
-4
d
-7.5
e
e
-8.0
f
-6
-6
-9.0
g
f
-10.0
h
-8
-8
-20.0
fs
i
07/96
= f
BUZ 172
A
A
g
I
D
I
D
( I
h
D
i
)
-12
-12