BUZ11AL Siemens Semiconductor Group, BUZ11AL Datasheet
BUZ11AL
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BUZ11AL Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V DS BUZ Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot Safe operating area parameter ...
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Typ. output characteristics parameter µ 75W tot ...
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Drain-source on-resistance (on) j parameter 0.26 0.22 R 0.20 DS (on) 0.18 0.16 0.14 0.12 0.10 98% 0.08 typ 0.06 0.04 0.02 0.00 -60 ...
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Avalanche energy parameter 15.6 µ ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group Not for new design 9 BUZ 11 AL 07/96 ...