MTB36N06V Motorola, MTB36N06V Datasheet

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MTB36N06V

Manufacturer Part Number
MTB36N06V
Description
TMOS POWER FET 32 AMPERES 60 VOLTS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS V
Power Field Effect Transistor
D 2 PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS V
Features Common to TMOS V and TMOS E–FETs
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous @ 25 C
Drain Current
Drain Current
Total Power Dissipation @ 25 C
Total Power Dissipation @ T A = 25 C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — STARTING T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 seconds
TMOS V is a new technology designed to achieve an on–resistance
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low R DS(on) Technology
Faster Switching than E–FET Predecessors
Avalanche Energy Specified
I DSS and V DS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and
TMOS E–FET
Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
Derate above 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, PEAK I L = 32 Apk, L = 0.1 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Junction to Ambient (1)
(T C = 25 C unless otherwise noted)
— Non–Repetitive (t p
Data Sheet
10 s)
Rating
50 s)
G
D
S
TM
Symbol
T J , T stg
V DGR
V GSM
V DSS
MTB36N06V
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
R DS(on) = 0.04 OHM
CASE 418B–02, Style 2
TMOS POWER FET
Motorola Preferred Device
32 AMPERES
60 VOLTS
– 55 to 175
Order this document
D 2 PAK
Value
22.6
1.67
62.5
112
205
260
0.6
3.0
60
60
32
90
50
by MTB36N06V/D
20
25
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTB36N06V Summary of contents

Page 1

... Designer’ trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 D G Rating 50 s) Order this document by MTB36N06V/D MTB36N06V Motorola Preferred Device TMOS POWER FET 32 AMPERES 60 VOLTS R DS(on) = 0.04 OHM TM CASE 418B–02, Style 2 S ...

Page 2

... MTB36N06V ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 150 C) Gate–Body Leakage Current ( Vdc Vdc) ...

Page 3

... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 125 150 175 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTB36N06V 100 – DRAIN CURRENT (AMPS) ...

Page 4

... MTB36N06V Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous current ( accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated. MTB36N06V d(off) t d(on) 10 ...

Page 6

... MTB36N06V 1000 DS(on) LIMIT SINGLE PULSE THERMAL LIMIT PACKAGE LIMIT 100 10 100 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1. 0.5 0.2 0.1 0.05 0.10 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 di/ 0. Figure 14 ...

Page 7

... Area for the D 2 PAK Package (Typical) Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTB36N06V ...

Page 8

... MTB36N06V Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 18. Typical Solder Heating Profile MTB36N06V STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 MTB36N06V/D ...

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