ATP212 Sanyo Semicon Device, ATP212 Datasheet - Page 3

• Manufacturer Part Number: ATP212
• Description: N-Channel Silicon MOSFET
• Manufacturer: Sanyo Semicon Device

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100
1.0
10
10
55
50
45
40
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
7
5
3
2
7
5
3
2
7
5
7
5
3
2
7
5
3
2
7
0.1
0.1
0
0
Tc=25 ° C
Single pulse
V DS =10V
Single pulse
V DD =30V
V GS =10V
1
I D =5A
0.2
2
2
2
3
3
0.4
3
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5
4
18A
5
7
0.6
9A
R DS (on) -- V GS
Drain Current, I D -- A
5
Drain Current, I D -- A
7
1.0
SW Time -- I D
1.0
6
|
I D -- V DS
0.8
y
fs | -- I D
2
7
2
1.0
3
8
3
9
5 7
1.2
10
5
10
11
7
1.4
10
12
2
Tc=25 ° C
Single pulse
1.6
13
3
2
14 15
1.8
IT14743
IT14745
IT14741
5 7
IT14747
3
100
ATP212
2.0
16
5
0.001
1000
0.01
100
100
1.0
0.1
10
60
50
40
30
20
10
55
50
45
40
35
30
25
20
15
10
0
5
0
--50
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
5
0
0
0
V GS =0V
Single pulse
V DS =10V
Single pulse
0.5
--25
0.2
10
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
0
1.5
Case Temperature, Tc -- ° C
0.4
20
R DS (on) -- Tc
2.0
25
I D -- V GS
I S -- V SD
0.6
2.5
50
30
3.0
0.8
75
3.5
40
1.0
4.0
100
No. A1507-3/4
Single pulse
4.5
50
1.2
f=1MHz
125
5.0
IT14742
IT14744
IT14746
IT14748
150
5.5
1.4
60
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