TN2425 Supertex Inc, TN2425 Datasheet

TN2425

Manufacturer Part Number

TN2425

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN2425.pdf (4 pages)

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Ordering Information

Features

❏ Low threshold

❏ High input impedance

❏ Low input capacitance

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Distance of 1.6 mm from case for 10 seconds.

Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

250V

DSS

DGS

(max)

3.5Ω

DS(ON)

(min)

1.5A

D(ON)

TO-243AA*

TN2425N8

-55°C to +150°C

N-Channel Enhancement-Mode

Vertical DMOS FETs

Order Number / Package

300°C

± 20V

DGS

DSS

TN2425ND

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally induced secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Option

DIE

Note: See Package Outline section for dimensions.

TO-243AA

(SOT-89)

where ❋ = 2-week alpha date code

Product marking for TO-243AA:

Low Threshold

TN4C❋

TN2425

Related parts for TN2425

TN2425 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN2425 Low Threshold Product marking for TO-243AA: TN4C❋ where ❋ = 2-week alpha date code TO-243AA (SOT-89) ...

Page 2

... GS D Ω 4.5V 250mA 10V 0. %/° 10V 0. 25V 250mA 0V 25V 1.0MHz V = 25V 500mA 25Ω GEN 0V 500mA 0V 500mA gen D.U.T. INPUT TN2425 I DRM 1.9A OUTPUT ...

Page 3

... V DS =15V 1.5 1.0 0.5 0.0 1.5 2.0 1.0 0.8 0.6 0.4 0.2 100 1000 3 Saturation Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0 (Volts) Power Dissipation vs. Case Temperature TO-243AA 100 125 T C (°C) Thermal Response Characteristics TO-243AA 25° 0.001 0.01 0.1 1 (seconds) TN2425 VGS = 10V 2.5V 10 150 10 ...

Page 4

... I D (Amperes) V GS(TH) and R DS(ON) w/ Temperature R DS(ON) @ 10V, 0.5A V GS(th) @ 1mA 0 50 100 ° Gate Drive Dynamic Characteristics 480mA V DS =10V V DS =40V 453pF 128pF 1.0 2.0 3.0 4.0 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com TN2425 5 1.8 1.5 1.2 0.9 0.6 150 5.0 11/12/01 ...

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