TN0620 Supertex Inc, TN0620 Datasheet
TN0620
Manufacturer Part Number
TN0620
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet
1.TN0620.pdf
(4 pages)
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High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Ordering Information
†
Distance of 1.6 mm from case for 10 seconds.
MIL visual screening available
Low threshold — 1.6V max.
High input impedance
Low input capacitance — 110pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
BV
BV
200V
DSS
DGS
/
R
(max)
6.0
DS(ON)
I
(min)
1.0A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
V
(max)
1.6V
BV
BV
300 C
GS(th)
20V
DGS
DSS
7-55
TN0620N3
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
TO-92
Note: See Package Outline section for dimensions.
TN0620N5
TO-92
TO-220
S G D
Low Threshold
TAB: DRAIN
TO-220
G
D S
TN0620
7
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TN0620 Summary of contents
Page 1
... Package Options BV DSS BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-55 TN0620 Low Threshold TO-220 TN0620N5 TO-220 TO-92 TAB: DRAIN 7 ...
Page 2
... V = 25V 10V 25V 5V 0.25A 10V 0. 10V 0. 25V 0. 0V 25V MHz V = 25V 1. GEN INPUT TN0620 I DRM 2.0A 2.5A OUTPUT D.U.T. ...
Page 3
... 2.0 2.5 0 1.0 0.8 0.6 0.4 0.2 0 1000 0.001 7-57 Saturation Characteristics (volts) DS Power Dissipation vs. Case Temperature TO-220 TO-39 TO- 100 125 150 Thermal Response Characteristics TO-220 P = 45W TO- 0.01 0 (seconds) p TN0620 10V ...
Page 4
... C ISS RSS 7-58 On-Resistance vs. Drain Current 10V GS 0 0.8 1.6 2.4 3.2 I (amperes and R Variation with Temperature (th 1mA (th 10V, 0. 100 Gate Drive Dynamic Characteristics V = 10V 40V DS 178 pF 100 pF 1.5 0 0.5 1.0 2.0 Q (nanocoulombs) G TN0620 4.0 2.0 1.6 1.2 0.8 0.4 0 150 2.5 ...