VN2450N3 Supertex Inc, VN2450N3 Datasheet

VN2450N3

Manufacturer Part Number

VN2450N3

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.VN2450N3.pdf (4 pages)

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Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Ordering Information

* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

** Die in wafer form.

Features

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Low C

❏ High input impedance and high gain

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

Distance of 1.6 mm from case for 10 seconds.

memories, displays, bipolar transistors, etc.)

500V

DSS

DGS

ISS

and fast switching speeds

(max)

13Ω

DS(ON)

(min)

0.5A

D(ON)

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

VN2450N3

300°C

± 20V

TO-92

DGS

DSS

Order Number / Package

Advanced DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Product marking for TO-243AA:

Note: See Package Outline section for dimensions.

Where ❋ = 2-week alpha date code

TO-243AA*

VN2450N8

TO-243AA

(SOT-89)

VN4E❋

VN2450NW

Die**

TO-92

S G D

VN2450

Related parts for VN2450N3

VN2450N3 Summary of contents

Page 1

... Vertical DMOS FETs Order Number / Package I D(ON) (min) TO-92 0.5A VN2450N3 Product marking for TO-243AA: Where ❋ = 2-week alpha date code Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces ...

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VN2450N3 Supertex Inc, VN2450N3 Datasheet

VN2450N3

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