NTD4970N ON Semiconductor, NTD4970N Datasheet - Page 4

• Manufacturer Part Number: NTD4970N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

19
18
17
16
15
14
13
12
10
50
40
30
20
10
11
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
9
8
7
0
0
3
−50
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
= 30 A
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
4
= 10 V
DS
V
10 V thru 4.5 V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
5
25
T
2
Temperature
J
6
= 25°C
Voltage
50
7
75
3
TYPICAL PERFORMANCE CURVES
100
8
V
125
I
T
4
D
GS
J
= 30 A
= 25°C
9
= 3.9 V
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3.6 V
3.3 V
2.7 V
3.0 V
150
10
5
175
4
10000
1000
100
21
20
19
18
17
16
15
14
13
12
10
11
50
40
30
20
10
10
9
8
7
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
T
V
Figure 6. Drain−to−Source Leakage Current
J
DS
= 25°C
= 10 V
15
V
V
Figure 2. Transfer Characteristics
DS
T
GS
10
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
2
20
T
I
D
J
, DRAIN CURRENT (A)
= 25°C
Gate Voltage
15
V
vs. Voltage
T
V
25
T
GS
T
J
J
GS
J
= 125°C
= 150°C
= 4.5 V
= 85°C
T
= 10 V
3
J
= −55°C
30
20
35
4
25
V
GS
40
= 0 V
45
30
5