NTD4960N ON Semiconductor, NTD4960N Datasheet - Page 5

• Manufacturer Part Number: NTD4960N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

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1000
1000
100
100
2000
1500
1000
0.1
10
10
500
1
1
0.1
1
0
0
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
C
DD
GS
C
GS
= 15 A
V
rss
= 25°C
C
C
DS
= 15 V
= 11.5 V
t
t
= 20 V
d(on)
d(off)
iss
oss
Figure 9. Resistive Switching Time
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
t
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
f
R
5
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
Safe Operating Area
1
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
20
V
T
GS
J
10 ms
100 ms
1 ms
10 ms
dc
= 25°C
http://onsemi.com
= 0 V
100
100
25
5
100
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
0.4
8
6
4
2
0
25
0
Figure 8. Gate−To−Source and Drain−To−Source
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
Q
GS
J
V
1
= 25°C
SD
= 0 V
0.5
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
T
5
J
Q
, JUNCTION TEMPERATURE (°C)
Q
G
Voltage vs. Total Charge
2
, TOTAL GATE CHARGE (nC)
0.6
75
10
Q
T
100
0.7
15
V
0.8
125
GS
20
I
150
I
T
0.9
D
D
J
= 13 A
= 30 A
= 25°C
175
1.0
25