TK12A60U Toshiba Semiconductor, TK12A60U Datasheet - Page 3

• Manufacturer Part Number: TK12A60U
• Description: Field Effect Transistor Silicon N-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
V DS = 20 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
1
2
Drain current I
Tc = −55°C
1
2
4
⎪Y
I
I
D
D
25
fs
– V
– V
⎪ − I
100
100
DS
GS
D
6
3
10
D
25
10
Ta = −55°C
GS
(A)
8
DS
V GS = 5.5 V
4
8
(V)
(V)
7.5
6.5
6
7
100
10
5
3
0.1
20
16
12
10
10
8
6
2
0
8
4
0
4
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Drain−source voltage V
Gate−source voltage V
4
10
10
Drain current I
1
R
V
DS (ON)
8
V GS = 10 V
I
DS
D
8
– V
20
– V
DS
GS
− I
12
D
D
15
10
I D = 12A
Common source
Tc = 25°C
Pulse test
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
3
30
6
TK12A60U
V GS = 6 V
16
(V)
(V)
2009-09-29
6.5
7.5
7
100
20
40