STW60N10 ST Microelectronics, STW60N10 Datasheet - Page 3

• Manufacturer Part Number: STW60N10
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
RRM
Q
I
Q
t
S D
t
t
t
rr
gs
gd
c
r
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
G
DD
G
DD
DD
G
DD
= 50
= 50
= 50
= 60 A
= 60 A
= 80 V
= 80 V
= 80 V
= 80 V
= 30 V
Test Conditions
Test Conditions
Test Conditions
V
V
di/dt = 100 A/ s
GS
I
I
I
I
D
D
D
G S
D
T
V
V
j
= 30 A
= 60 A
= 60 A
= 30 A
GS
GS
= 10 V
= 150
= 0
= 10 V
= 10 V
Safe Operating Areas For ISOWATT218
o
C
V
GS
= 10 V
Min.
Min.
Min.
STH60N10/FI STW60N10
Typ.
Typ.
Typ.
270
270
120
200
210
410
180
90
16
60
11
1
Max.
Max.
Max.
130
380
170
280
290
570
240
1.6
60
Unit
A/ s
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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