PSMN005-25D Philips, PSMN005-25D Datasheet - Page 5

• Manufacturer Part Number: PSMN005-25D
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: Philips

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
50
45
40
35
30
25
20
15
10
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
2
1
0
5
0
Fig.8. Typical transconductance, T
-60
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
0.2 0.4 0.6 0.8
Fig.7. Typical transfer characteristics.
-40
5
-20
10
R
0
DS(ON)
Gate-source voltage, VGS (V)
Junction temperature, Tj (C)
15
20
1
Drain current, ID (A)
/R
I
1.2 1.4 1.6 1.8
D
g
20
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
25
175 C
GS
D
)
80
)
30
= f(T
Tj = 25 C
100
2
35
2.2 2.4 2.6 2.8
j
)
120
Tj = 25 C
j
40
= 25 ˚C .
140
175 C
45
160
180
3
50
transistor
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
10000
2.25
1.75
1.25
0.75
0.25
1.5
0.5
1000
V
100
2
1
0
Fig.12. Typical capacitances, C
-60
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0.1
0
= f(V
Drain current, ID (A)
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
VDS = 5 V
-40
Fig.10. Gate threshold voltage.
= f(T
-20
GS)
DS
minimum
0.5
); conditions: V
; conditions: T
j
); conditions: I
0
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
20
Junction Temperature, Tj (C)
1
1
typical
40
60
minimum
1.5
j
maximum
typical
GS
D
= 25 ˚C; V
80
= 1 mA; V
= 0 V; f = 1 MHz
PSMN005-25D
Product specification
100
10
maximum
2
iss
120
, C
DS
140
DS
Crss
oss
Ciss
Coss
2.5
= V
, C
= V
Rev 1.100
160
GS
rss
GS
100
.
180
3