BSH107 Philips Semiconductors, BSH107 Datasheet

no-image

BSH107

Manufacturer Part Number
BSH107
Description
N-channel enhancement mode MOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH107 is supplied in the
SOT457
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1998
N-channel enhancement mode
MOS transistor
SYMBOL
V
V
V
I
I
P
T
SYMBOL
R
D
DM
stg
DS
DGR
GS
tot
th j-a
, T
j
level,
subminiature
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
ambient
field-effect
surface
power
PINNING
SYMBOL
1,2,5,6 drain
PIN
3
4
gate
source
g
CONDITIONS
R
T
T
T
T
T
CONDITIONS
FR4 board, minimum
footprint
a
a
a
a
a
GS
DESCRIPTION
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 20 k
1
d
s
QUICK REFERENCE DATA
SOT457
R
TYP.
MIN.
DS(ON)
- 55
300
-
-
-
-
-
-
-
-
V
90 m (V
GS(TO)
I
V
D
Product specification
DS
1
6
= 1.75 A
MAX.
0.417
MAX.
= 20 V
1.75
0.17
150
1.1
20
20
7
-
2
5
8
0.4 V
GS
4
3
= 2.5 V)
BSH107
Top view
Rev 1.000
UNIT
UNIT
K/W
W
W
˚C
V
V
V
A
A
A

Related parts for BSH107

BSH107 Summary of contents

Page 1

... This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH107 is supplied in the SOT457 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) ...

Page 2

... GS G Resistive load MHz GS DS CONDITIONS ˚ 0 0.5 A; -dI /dt = 100 Product specification BSH107 MIN. TYP. MAX. UNIT 0.4 0. 150˚C 0 110 - 104 135 0.5 2 100 ...

Page 3

... Fig.4. Transient thermal impedance f(t); parameter j-a p 1.8 V 4.5V 2.5V VGS = 1.5 V 0.2 0.4 0.6 0.8 Drain-Source Voltage, VDS ( f(V ); parameter 1.2 V 1.3 V 1.4 V 1.5 V 1.6 V VGS = 4 0.5 1 1.5 2 2.5 3 3.5 Drain Current f(I ); parameter V DS(ON BSH107 BSH107 D = tp/T 1E+00 1E+01 BSH107 1.6 V 1.4 V 1.3 V 1 ˚ BSH107 1 ˚C . Rev 1.000 ...

Page 4

... 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Gate-Source Voltage, VGS (V) Fig.11. Sub-threshold drain current f(V ; conditions ˚C D GS) j Capacitances, Ciss, Coss, Crss (pF) 0 Drain-Source Voltage, VDS ( iss ); conditions MHz DS GS BSH107 125 150 = 0.9 1 BSH107 Ciss Coss Crss 100 , C . oss rss Rev 1.000 ...

Page 5

... Gate charge, QG (nC) Fig.13. Typical turn-on gate-charge characteristics f August 1998 BSH107 Source-Drain Diode Current, IF (A) -5 -4.5 -4 -3.5 -3 -2.5 -2 -1 Fig.14. Typical reverse diode current f Product specification BSH107 BSH107 150 -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage, VSDS (V) ); conditions parameter T SDS Rev 1.000 ...

Page 6

... scale 0.40 0.26 3.1 1.7 3.0 0.6 0.33 0.95 0.25 0.10 2.7 1.3 2.5 0.2 0.23 REFERENCES IEC JEDEC EIAJ SC-74 Fig.15. SOT457 surface mounting package. 6 Product specification SOT457 detail 0.2 0.2 0.1 EUROPEAN ISSUE DATE PROJECTION 97-02-28 BSH107 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Product specification BSH107 Rev 1.000 ...

Related keywords