BS107A Philips Semiconductors, BS107A Datasheet - Page 2

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BS107A

Manufacturer Part Number
BS107A
Description
N-channel enhancement mode vertical D-MOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in TO-92
envelope and designed for use as line
current interrupter in telephone sets
and for application in relay,
high-speed and line-transformer
drivers.
PINNING - TO-92
PIN CONFIGURATION
April 1995
1
2
3
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No second breakdown
N-channel enhancement mode vertical
D-MOS transistor
Note: Various pinnings are available.
=
=
=
source
gate
drain
handbook, halfpage
1
2
3
QUICK REFERENCE DATA
Fig.1 Simplified outline and symbol.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to T
Drain-source ON-resistance
Transfer admittance
I
I
D
D
= 250 mA; V
= 250 mA; V
MSB033
2
GS
GS
= 10 V
= 25 V
handbook, 2 columns
g
MBB076 - 1
case
= 25 C
d
s
V
I
P
R
D
DS
tot
Y
DS(on)
V
fs
GSO
Product specification
max.
max.
max.
max.
typ.
max.
min.
typ.
BS107A
200 V
250 mA
200
350
0.6 W
4.5
6.4
20 V
mS
mS

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