BTS933 Siemens Semiconductor Group, BTS933 Datasheet - Page 4

• Manufacturer Part Number: BTS933
• Description: Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
• Manufacturer: Siemens Semiconductor Group

Characteristics
Initial peak short circuit current limit
V
Current limit
V
T
V
T
Electrical Characteristics
Parameter
at T
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
I
Inverse Diode
Inverse diode forward voltage
I
1
Semiconductor Group
D
D
F
Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values
j
j
IN
IN
IN
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
L
L
L
L
= -40...+150 °C, without R
= -40...+150 °C, R
= 5*7A, t
= 7 A, T
= 7 A, T
= -
= -
= -
= -
= 10 V, V
= 10 V, V
= 10 V, V
j
=25°C, unless otherwise specified
, V
, V
, V
, V
j
j
IN
IN
IN
IN
m
= 25 °C, V
= 150 °C, V
1)
DS
DS
DS
= 300 s, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
= 12 V
= 12 V, t
= 12 V, t
V
V
70 to 50% V
50 to 70% V
IN
IN
CC
to 90% I
to 10% I
bb
bb
= 0
m
m
= 32 V
IN
= 32 V
= 350 µs,
= 350 µs,
bb
bb
bb
bb
= 0 V
CC
D
D
= 12 V
= 12 V
= 12 V
= 12 V
bb
bb
:
:
:
:
Page 4
I
I
t
t
-dV
dV
T
E
V
Symbol
D(SCp)
D(lim)
on
off
jt
AS
SD
DS
DS
/dt
/dt
off
on
2000
min.
150
450
60
3
-
-
-
-
-
-
Values
125
1.08
typ.
165
80
40
70
7
1
1
-
-
max.
100
100
170
12
-
3
3
-
-
-
-
14.07.1998
BTS 933
A
Unit
µs
V/µs
°C
mJ
V