BTS430K2 Siemens Semiconductor Group, BTS430K2 Datasheet - Page 4

• Manufacturer Part Number: BTS430K2
• Description: Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)
• Manufacturer: Siemens Semiconductor Group

Parameter and Conditions
at T
Protection Functions
Overload current limit (pin 3 to 5)
Short circuit shutdown delay after input pos. slope
Output clamp (inductive load switch off)
Short circuit shutdown detection voltage
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
Reverse battery (pin 3 to 1)
Integrated resistor in V
Diagnostic Characteristics
Open load detection current
Leakage output current
4)
5
Semiconductor Group
)
min value valid only, if input "low" time exceeds 30 s
(on-condition, )
T
V
at V
T
(off-condition)
(pin 3 to 5)
j
j Start
ON
=-40...+150°C
j
While demagnetizing load inductance, dissipated energy in PROFET is E
E
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
these condition is dependent on the size of the heatsink. Reverse I
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
= 25 °C, V
AS
OUT
> V
=
= 150 °C
1
ON(SC)
= V
/
2
* L * I
bb
bb
,
- V
= 12 V unless otherwise specified
2
L
* (
ON(CL)
GND
V
ON(CL)
V
of
ON(CL)
bb
line
0.3 A at V
- V
bb
5
)
), see diagramm page 8
bb
T
= -32 V through the logic heats up the device. Time allowed under
j
=-40..+150°C:
T
j
=25..150°C:
V
V
T
bb
bb
j
=-40 °C
4)
= 12 V:
= 24 V:
,
4
:
I
t
V
V
T
E
E
E
- V
R
I
I
Symbol
L(lim)
d(SC)
L (OL)
L(off)
jt
T
ON(CL)
ON(SC)
AS
Load12
Load24
bb
bb
jt
GND
can be reduced by an additional
AS
= V
150
min
19
80
10
10
--
--
--
--
--
--
--
ON(CL)
Values
120
8.3
typ
36
50
10
* i
--
--
--
--
--
--
6
L
(t) dt, approx.
BTS 430 K2
max
400
500
600
1.7
1.3
1.0
57
32
--
--
--
--
--
--
Unit
mA
°C
A
V
V
K
V
A
s
J