BTS425L1 Siemens Semiconductor Group, BTS425L1 Datasheet - Page 6

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BTS425L1

Manufacturer Part Number
BTS425L1
Description
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Manufacturer
Siemens Semiconductor Group
Datasheet
Truth Table
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
12
13
14)
15
Semiconductor Group
Normal
operation
Open load
Short circuit
to V
Overtem-
perature
Under-
voltage
Overvoltage
) Power Transistor off, high impedance
) with external resistor between pin 3 and pin 5
) Low resistance to V
V
bb
An external short of output to V
is used, an offset voltage at the GND and ST pins will occur and the V
bb
V
IN
IN
I IN
V ST
I ST
2
ESD-ZD
4
Input-
level
R
IN
ST
H
H
H
H
H
H
L
L
L
L
L
L
I
R
X = don't care
GND
bb
I
Status signal after the time delay shown in the diagrams (see fig 5. page 10)
PROFET
GND
may be detected in ON-state by the no-load-detection
GND
3
1
V
Output
bb
level
I bb
12 )
I GND
H
H
H
H
L
L
L
L
L
L
L
I
I
OUT
bb
, in the off state, causes an internal current from output to ground. If R
Status
5
H (L
H (L
I L
425 L1
426 L1
L
H
H
H
H
H
H
H
L
L
14)
Z = high impedance, potential depends on external circuit
13)
15)
V OUT
V ON
)
)
6
Status output
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
overvoltage output clamp
V
ON
ST(ON)
clamped to 47 V typ.
< 380
ST low
R
at 1.6 mA, ESD zener diodes are not
ST(ON)
V
GND
signal may be errorious.
Z
GND
PROFET
ESD-
ZD
BTS 425 L1
ST
+5V
+ V bb
OUT
V
ON
GND

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