HAT2027R Hitachi Semiconductor, HAT2027R Datasheet - Page 7

• Manufacturer Part Number: HAT2027R
• Description: Silicon N Channel Power MOS FET High Speed Power Switchin
• Manufacturer: Hitachi Semiconductor

0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
10 µ
10 µ
1
1
D = 1
D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
0.5
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
100 µ
100 µ
1 m
1 m
10 m
10 m
Pulse Width PW (S)
Pulse Width PW (S)
100 m
100 m
1
1
When using the glass epoxy board
(FR4 40x40x1.6 mm)
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P
P
DM
DM
ch – f(t) = s (t) •
ch – f = 166 °C/W, Ta = 25 °C
ch – f(t) = s (t) •
ch – f = 125 °C/W, Ta = 25 °C
10
10
PW
PW
T
T
100
100
ch – f
ch – f
1000
1000
D =
D =
HAT2027R
PW
PW
T
T
10000
10000
7