HAT2026R Hitachi Semiconductor, HAT2026R Datasheet - Page 5

• Manufacturer Part Number: HAT2026R
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
50
20
10
50
40
30
20
10
5
0.2
0
V
I
V
DS
D
Reverse Drain Current
DD
Dynamic Input Characteristics
= 11 A
Body–Drain Diode Reverse
0.5
20
= 5 V
Gate Charge
10 V
20 V
Recovery Time
1
V
40
DD
di/dt = 20 A/µs
V
GS
2
V
= 20 V
GS
10 V
5 V
60
= 0, Ta = 25°C
Qg (nc)
5
I
DR
80
10
(A)
100
20
20
16
12
8
4
0
10000
5000
2000
1000
1000
500
200
100
500
200
100
50
20
10
0.2
0
V
f = 1 MHz
Drain to Source Voltage V
GS
0.5
Switching Characteristics
4
Drain to Source Voltage
= 0
Typical Capacitance vs.
t
Drain Current
d(on)
t f
1
V
PW = 3 µs, duty < 1 %
8
GS
t
r t
d(off)
2
= 4 V, V
12
I
D
Coss
5
Ciss
DD
Crss
HAT2026R
(A)
16
DS
= 10 V
10
(V)
20
20
5