HAT1139H Renesas Technology, HAT1139H Datasheet

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HAT1139H

Manufacturer Part Number
HAT1139H
Description
Silicon P Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
HAT1139H
Silicon P Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.2.00
Capable of –4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. 1 Drive operation : Tc = 25
3. 2 Drive operation : Tc = 25
= 7.0 m typ. (at V
Jun. 22, 2005,
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
10 s, duty cycle
Item
page 1 of 6
5
GS
= –10 V)
1 2
1%
3
°
°
4
C
C
G
2
I
D(pulse)
Symbol
Pch
Pch
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note2
Note3
D
S
5
1
Note1
G
3
D
S
5
4
–55 to +150
–25 / +20
Ratings
–120
–30
–30
–30
150
15
30
1, 4 Source
2, 3 Gate
5
Drain
REJ03G1244-0200
Unit
Jun.22.2005
W
W
V
V
A
A
A
C
C
(Ta = 25 C)
Rev.2.00

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HAT1139H Summary of contents

Page 1

... HAT1139H Silicon P Channel Power MOS FET Power Switching Features Capable of –4.5 V gate drive Low drive current www.DataSheet4U.com High density mounting Low on-resistance R = 7.0 m typ. (at V DS(on) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT1139H Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance www.DataSheet4U.com Reverse transfer capacitance Total gate charge Gate to source charge ...

Page 3

... HAT1139H Main Characteristics Power vs. Temperature Derating www.DataSheet4U.com 0 50 Case Temperature Typical Output Characteristics –50 –40 –30 –20 –10 0 –2 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.4 –0.3 –0.2 –0.1 0 –4 0 Gate to Source Voltage Rev.2.00 Jun. 22, 2005, ...

Page 4

... HAT1139H Static Drain to Source on State Resistance 20 Pulse Test –4 – www.DataSheet4U.com 0 –25 0 Case Temperature Body-Drain Diode Reverse 1000 100 10 –0.1 Reverse Drain Current Dynamic Input Characteristics 0 –10 – – – –10 V –25 V – Gate Charge Rev ...

Page 5

... HAT1139H www.DataSheet4U.com 0.5 0.2 0.1 0.1 0.05 0.01 0.01 0.001 10 µ Switching Time Test Circuit Vin Monitor 4.7 Ω Vin -10 V Rev.2.00 Jun. 22, 2005, Reverse Drain Current vs. Source to Drain Voltage –50 –40 –10 V –30 – – –0.4 –1.2 –0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.02 100 µ ...

Page 6

... HAT1139H Package Dimensions JEITA Package Code SC-100 www.DataSheet4U.com Ordering Information Part Name HAT1139H-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jun. 22, 2005, RENESAS Code Package Name MASS[Typ ...

Page 7

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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