HAT1126RJ Renesas Technology, HAT1126RJ Datasheet

no-image

HAT1126RJ

Manufacturer Part Number
HAT1126RJ
Description
Silicon P Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT1126RJ-EL-E
Manufacturer:
SIEMENS
Quantity:
100
www.DataSheet4U.com
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.1.00 Sep. 10, 2004 page 1 of 7
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
4. Value at Tch = 25 C, Rg
Item
10 s, duty cycle
SOP-8
G
2
MOS1
S
7 8
D
1
I
1%
D
D
50
(pulse)
Symbol
Pch
Pch
E
I
AP
V
V
AR
Tstg
Tch
G
4
I
DSS
GSS
Note4
D
Note4
Note2
Note3
Note1
MOS2
S
5 6
D
3
D
–55 to +150
HAT1126R
–6.0
150
–60
–48
20
2
3
8
7
6
5
1 2
Ratings
3 4
HAT1126RJ
–55 to +150
1, 3
2, 4
5, 6, 7, 8 Drain
–6.0
–6.0
3.08
–60
–48
150
20
2
3
Source
Gate
10 s
10 s
REJ03G0406-0100
Sep.10.2004
Unit
(Ta = 25 C)
mJ
W
W
V
V
A
A
A
C
C
Rev.1.00

Related parts for HAT1126RJ

HAT1126RJ Summary of contents

Page 1

... HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive www.DataSheet4U.com High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 Absolute Maximum Ratings Item Drain to source voltage ...

Page 2

... HAT1126R, HAT1126RJ Electrical Characteristics Item Drain to source breakdown voltage Gate to Source breakdown voltage V Zero gate voltage drain current HAT1126R Zero gate voltage drain current HAT1126RJ Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state www.DataSheet4U.com ...

Page 3

... HAT1126R, HAT1126RJ Main Characteristics Power vs. Temperature Derating 4.0 Test condition. When using the glass epoxy board. (FR4 1.6 mm), (PW 3.0 2.0 1.0 www.DataSheet4U.com 0 Ambient Temperature –10 –8 –6 –4 –2 0 Drain to Source Voltage Drain to Source Saturation Voltage vs. –400 –300 –200 –100 0 Gate to Source Voltage Rev ...

Page 4

... HAT1126R, HAT1126RJ Static Drain to Source on State Resistance 160 120 www.DataSheet4U.com –50 –25 Case Temperature 100 –0.1 Reverse Drain Current Dynamic Input Characteristics 0 –20 – –60 – – –100 0 Rev.1.00 Sep. 10, 2004, page vs. Temperature Pulse Test – ...

Page 5

... HAT1126R, HAT1126RJ www.DataSheet4U.com 10 1 0.1 0.01 0.001 0.0001 0.1 0.01 0.001 0.0001 10 Rev.1.00 Sep. 10, 2004, page Reverse Drain Current vs. Source to Drain Voltage –10 –10 V –8 –6 –5 V – –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation ...

Page 6

... HAT1126R, HAT1126RJ Vin -15 V www.DataSheet4U.com Switching Time Test Circuit Vin Monitor Rg Vin -10 V Rev.1.00 Sep. 10, 2004, page Avalanche Test Circuit Monitor I AP Monitor Vout Monitor D.U. -10 V Avalanche Waveform V DSS ...

Page 7

... HAT1126R, HAT1126RJ Package Dimensions www.DataSheet4U.com *Dimension including the plating thickness Base material dimension Ordering Information Part Name HAT1126R-EL-E HAT1126RJ-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Sep. 10, 2004, page ...

Page 8

... Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp third party. ...

Related keywords