HAT1041T Renesas Technology, HAT1041T Datasheet
HAT1041T
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HAT1041T Summary of contents
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www.DataSheet4U.com ...
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... The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination ...
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... Silicon P Channel Power MOS FET Features www.DataSheet4U.com Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1041T High Speed Power Switching TSSOP ADE-208-1238F ( Drain ...
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... HAT1041T Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Channel dissipation Channel temperature Storage temperature Note duty cycle 2. When using the glass epoxy board (FR4 1.6 mm), PW 10s www ...
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... Drain Current Pulse Test -10 V ( -10 -20 I (A) D HAT1041T Typical Transfer Characteristics - Pulse Test - Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0. ...
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... HAT1041T 0.5 0.1 0.01 www.DataSheet4U.com 0.001 0.0001 10 100 Normalized Transient Thermal Impedance vs. Pulse Width 100 m Pulse Width 139 C/ When using the glass epoxy board (FR4 40x40x1.6 mm 100 1000 PW T 10000 ...
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... Package Dimensions 3.30 Max 8 1 +0.08 *0.22 –0.07 0.20 0.06 www.DataSheet4U.com *Dimension including the plating thickness Base material dimension 3. 0.65 0.13 M 6.40 0.805 Max 0. January, 2001 1.0 0.20 0 – 8 0.50 0.10 Hitachi Code TTP-8D JEDEC — EIAJ — Mass (reference value) — HAT1041T Unit: mm ...
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... HAT1041T Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...