BUK9675-55 Philips Semiconductors, BUK9675-55 Datasheet - Page 4

• Manufacturer Part Number: BUK9675-55
• Description: TrenchMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
ID/A
50
40
30
20
10
Fig.5. Typical output characteristics, T
ID/A
I
D
0
55
Fig.6. Typical on-state resistance, T
90
85
80
75
70
65
60
0
25
20
15
10
= f(V
5
5
0
RDS(ON)/mOhm
0
Fig.7. Typical transfer characteristics.
VGS/V =
Tj/C =
GS
) ; conditions: V
R
2
I
DS(ON)
D
1
10
= f(V
175
= f(I
transistor
DS
4
); parameter V
D
2
); parameter V
VDS/V
VGS/V
15
DS
25
= 25 V; parameter T
6
ID/A
10.0
3
4
8.0
GS
20
4.2
4.4
4.6
4.8
GS
8
j
4
j
VGS/V =
= 25 ˚C .
= 25 ˚C .
5
10
25
6.0
5.4
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
5
j
4
Fig.9. Normalised drain-source on-state resistance.
a = R
V
2.5
1.5
0.5
Fig.8. Typical transconductance, T
2.5
1.5
0.5
15
14
13
12
11
10
2
1
0
-100
GS(TO)
-100
9
8
7
6
5
2
1
0
VGS(TO) / V
a
Transconductance, gfs (S)
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
5
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Drain current, ID (A)
Tmb / degC
10
= f(T
Tj / C
50
50
Rds(on) normlised to 25degC
j
); I
D
15
= 1 mA; V
D
100
= 10 A; V
100
DS
Product specification
= 25 V
BUK9675-55
20
150
BUK959-60
j
150
= 25 ˚C .
DS
GS
= V
Rev 1.100
= 5 V
200
25
200
GS