BUK9506-30 Philips Semiconductors, BUK9506-30 Datasheet - Page 6

• Manufacturer Part Number: BUK9506-30
• Description: TrenchMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
5
4
3
2
1
0
V
100
I
0
80
60
40
20
VGS / V
GS
F
0
0
= f(V
IF / A
= f(Q
Fig.14. Typical reverse diode current.
SDS
G
20
); conditions: I
Tj / C = 175
); conditions: V
0.5
VDS / V = 6
transistor
40
QG / nC
VSDS / V
D
25
1
GS
= 75 A; parameter V
60
= 0 V; parameter T
1.5
24
80
9506-30
9506-30
100
DS
j
2
6
VGS
0
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
Fig.17. Switching test circuit.
DSS
40
% = f(T
RGS
0.5 LI
60
RG
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
RD
VDS
120
BV
T.U.T.
VDS
T.U.T.
Product specification
DSS
BUK9506-30
140
D
shunt
= 75 A
R 01
V
DD
160
-
+
-
+
Rev 1.100
-ID/100
180
VDD
VDD