BUK7524-55 Philips Semiconductors, BUK7524-55 Datasheet
BUK7524-55
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BUK7524-55 Summary of contents
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... CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK7524-55 MAX. UNIT 55 45 103 175 SYMBOL MIN. MAX. UNIT - 180 - 103 ...
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... Measured from source lead 6 mm from package to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7524-55 MIN. TYP. MAX. UNIT 2.0 3.0 4 4.4 - 0.05 ...
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... I & 0.1 0.01 0.001 120 140 160 180 Product specification BUK7524-55 MIN. TYP. MAX ˚ 100 100 ms 10 100 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter t ...
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... Fig.9. Normalised drain-source on-state resistance -100 Product specification BUK7524- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚C ...
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... 120 110 100 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK7524-55 Tj/C = 175 25 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS ...
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... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. January 1997 VDD + VDS - T.U.T. 6 Product specification BUK7524-55 Rev 1.000 ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". January 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7524-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1997 8 Product specification BUK7524-55 Rev 1.000 ...