BUK7518-55 Philips Semiconductors, BUK7518-55 Datasheet
BUK7518-55
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BUK7518-55 Summary of contents
Page 1
... CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK7518-55 MAX. UNIT 55 57 125 175 SYMBOL MIN. MAX. UNIT - 228 - 125 ...
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... Measured from source lead 6 mm from package to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7518-55 MIN. TYP. MAX. UNIT 2.0 3.0 4 ...
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... GS GS RDS(ON) = VDS/ID 120 140 160 180 = f & 0.1 0.01 0.001 120 140 160 180 Product specification BUK7518-55 MIN. TYP. MAX ˚C mb 1000 100 100 1 10 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter ...
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... ˚C . Fig.9. Normalised drain-source on-state resistance -100 Product specification BUK7518- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚C ...
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... 120 110 100 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS QG/ Product specification BUK7518-55 Tj/C = 175 0.2 0.4 0.6 0.8 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS ...
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... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. January 1997 VDD + VDS - T.U.T. 6 Product specification BUK7518-55 Rev 1.000 ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". January 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7518-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1997 8 Product specification BUK7518-55 Rev 1.000 ...