BUK581-60A Philips Semiconductors, BUK581-60A Datasheet - Page 3

• Manufacturer Part Number: BUK581-60A
• Description: PowerMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1995
PowerMOS transistor
Logic level FET
ID% = 100 I
1E+02
1E+01
1E+00
Fig.2. Normalised continuous drain current.
1E-01
1E-02
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
1E-07
Fig.3. Transient thermal impedance.
0
0
PD%
ID%
Zth j-amb / (K/W)
D =
0.05
0.02
Z
0.5
0.2
0.1
PD% = 100 P
th j-amb
20
20
D
/I
1E-05
D 25 ˚C
= f(t); parameter D = t
40
40
= f(T
1E-03
60
60
D
Tamb / C
Tamb / C
amb
/P
t / s
D 25 ˚C
); conditions: V
Normalised Current Derating
80
80
Normalised Power Derating
1E-01
P
D
= f(T
100
100
t
1E+01
p
amb
T
120
120
p
/T
)
BUKX81
D =
GS
140
140
t
T
1E+03
p
t
5 V
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
I
D
& I
Fig.4. Safe operating area T
0.01
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
0.1
10
1
0
DM
1
0
ID / A
0.1
0
10
RDS(ON) / Ohm
ID / A
= f(V
R
I
DS(ON)
D
DS
= f(V
2
1
4.5
); I
5
= f(I
1
3
DM
DS
); parameter V
single pulse; parameter t
4
D
DC
2
); parameter V
VDS / V
VDS / V
ID / A
10
3.5
6
3
Product Specification
VGS / V = 2.5
BUK581-60A
BUK581-60A
VGS / V = 10
amb
tp = 100 us
1 ms
10 ms
100 ms
1 s
10 s
100
BUK581-60A
BUK581-60A
8
GS
4
= 25 ˚C
GS
4
j
j
= 25 ˚C .
3.5
4.5
= 25 ˚C .
3
4
10
5
Rev 1.100
5
p