BUK481-100A Philips Semiconductors, BUK481-100A Datasheet

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BUK481-100A

Manufacturer Part Number
BUK481-100A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
1 Temperature measured 1-3 mm from tab.
January 1998
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
stg
j
DS
DGR
tot
th j-b
th j-amb
1
2
3
4
GS
gate
drain
source
drain (tab)
From junction to board
From junction to ambient
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
1
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
CONDITIONS
R
T
T
-
-
T
T
-
-
amb
amb
amb
amb
1
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 10 V
MIN.
SYMBOL
- 55
-
-
-
-
-
-
-
-
MIN.
-
-
g
Product Specification
MAX.
TYP.
0.80
MAX.
100
150
50
1.0
1.5
BUK481-100A
100
100
150
150
0.6
1.5
-
30
1
4
d
s
MAX.
85
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
V
V
V
A
A
A
UNIT
K/W
K/W
W
˚C
V
A

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BUK481-100A Summary of contents

Page 1

... PIN CONFIGURATION CONDITIONS - ˚C amb T = 100 ˚C amb ˚C amb ˚C amb - - CONDITIONS 1 Mounted on any PCB Mounted on PCB of Fig.17 1 Product Specification BUK481-100A MAX. 100 1.0 1.5 150 0. SYMBOL MIN. MAX. - 100 - 100 - 0 1 ...

Page 2

... -dI /dt = 100 - CONDITIONS ˚C amb 2 Product Specification BUK481-100A MIN. TYP. MAX. UNIT 100 - - V 2.1 3.0 4 0.1 1 100 nA - 0.48 0.80 MIN. TYP. MAX. UNIT ...

Page 3

... Fig.4. Safe operating area ˚C amb & f single pulse; parameter BUK481-100A VGS / VDS / f(V ); parameter RDS(ON) / Ohm BUK481-100A 2 4.5 5 5.5 6 6.5 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 VGS / 0 f(I ); parameter V DS(ON 6 ...

Page 4

... Fig.10. Gate threshold voltage. = f(T ); conditions 0.1 mA SUB-THRESHOLD CONDUCTION SIZE typ VGS / V Fig.11. Sub-threshold drain current. = f(V ); conditions ˚ BUK481-100A VDS / iss ); conditions MHz Ciss Coss Crss , C ...

Page 5

... parameter T F SDS GS January 1998 BUK481-100A 120 110 100 Fig.15. Normalised avalanche energy rating. DS BUK481-100A 25 VGS Product Specification BUK481-100A WDSS% Normalised Avalanche Energy 100 120 Tamb f(T ); conditions ...

Page 6

... Philips Semiconductors PowerMOS transistor PRINTED CIRCUIT BOARD Fig.17. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). January 1998 Product Specification BUK481-100A Dimensions in mm. 18 4.5 Rev 1.000 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". January 1998 3.1 0.32 0.24 2.9 0.10 0. max 1.05 2.3 1.8 max 0.85 Fig.18. SOT223 surface mounting package. 7 Product Specification BUK481-100A 6.7 6 7.3 3.7 3.3 6 0.80 0 0.60 (4x) 4.6 0 Rev 1.000 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 8 Product Specification BUK481-100A Rev 1.000 ...

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