BUK438-800A Philips Semiconductors, BUK438-800A Datasheet - Page 3

• Manufacturer Part Number: BUK438-800A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1998
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.3. Safe operating area. T
0
0
100
0.1
Fig.1. Normalised power dissipation.
10
0
0
1
DM
PD%
ID%
10
ID / A
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
= f(T
DM
100
DC
single pulse; parameter t
60
60
mb
D
Tmb / C
VDS / V
Tmb / C
/P
B
A
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
1000
= f(T
100
100
tp = 10 us
100 us
1 ms
10 ms
100 ms
mb
BUK438-800
mb
120
120
= 25 ˚C
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
0.01
0.1
1
1E-07
20
15
10
5
4
3
2
1
0
Fig.4. Transient thermal impedance.
5
0
Zth j-mb / (K/W)
0
RDS(ON) / Ohm
D =
0.05
0.02
0
ID / A
Z
0.5
0.2
0.1
R
0
th j-mb
4
I
DS(ON)
D
= f(V
1E-05
= f(t); parameter D = t
5
4.5
= f(I
10
DS
); parameter V
D
); parameter V
VDS / V
ID / A
5
1E-03
10
t / s
BUK438W-800A/B
VGS / V =
P
D
20
VGS / V =
Product specification
t
p
BUK4y8-800A
15
T
BUK4y8-800A
1E-01
5.5
GS
D =
GS
p
10
6
BUKx38-hv
/T
10
j
t
T
j
p
= 25 ˚C .
t
30
= 25 ˚C .
4.5
5.5
5
20
6
4
Rev 1.000
1E+01