BUK436-800A Philips Semiconductors, BUK436-800A Datasheet - Page 3

• Manufacturer Part Number: BUK436-800A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1998
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
100
120
110
100
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
1
Fig.3. Safe operating area. T
0
0
Fig.1. Normalised power dissipation.
10
0
0
ID / A
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
= f(T
100
DM
DC
single pulse; parameter t
60
60
mb
D
Tmb / C
VDS / V
Tmb / C
B
/P
A
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
1000
= f(T
100
100
10 ms
100 ms
100 us
1 ms
tp = 10 us
mb
BUK456-800A,B
mb
120
120
= 25 ˚C
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
0.01
10
8
6
4
2
0
0.1
8
6
4
2
0
10
1
0
ID / A
0
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
Zth j-mb / (K/W)
D =
0.05
0.02
Z
0.5
0.2
0.1
R
0
th j-mb
4
4
I
DS(ON)
D
= f(V
1E-05
4.2
= f(t); parameter D = t
8
2
= f(I
DS
4.4
12
); parameter V
D
); parameter V
VDS / V
1E-03
ID / A
t / s
BUK436W-800A/B
VGS / V =
4.6
VGS / V =
16
P
D
4
20
Product specification
t
4.8
p
T
1E-01
GS
BUK4y6-800A
BUK4y6-800A
D =
24
GS
p
BUKx56-hv
/T
10
5
6
j
T
t
p
t
j
= 25 ˚C .
6
= 25 ˚C .
28
Rev 1.000
1E+01
4.8
4.4
4.6
4.2
10
5
4