BUK436-200A Philips Semiconductors, BUK436-200A Datasheet - Page 3

• Manufacturer Part Number: BUK436-200A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
July 1997
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
120
110
100
100
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.3. Safe operating area. T
0
1
0
Fig.1. Normalised power dissipation.
0
0
1
DM
PD%
ID / A
ID%
= f(V
PD% = 100 P
20
20
D
A B
/I
D 25 ˚C
DS
10
); I
40
40
DC
= f(T
DM
single pulse; parameter t
60
60
mb
D
Tmb / C
Tmb / C
VDS / V
/P
100
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
100 ms
100 us
1 ms
10 ms
tp = 10 us
= f(T
100
100
1000
mb
BUK436-200A,B
mb
120
120
= 25 ˚C
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0.01
0
0.1
0
10
1
0
0
ID / A
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
Zth j-mb / (K/W)
D =
0.05
0.02
4
Z
0.5
0.2
0.1
2
R
0
th j-mb
I
DS(ON)
D
4
= f(V
1E-05
4.5
10
= f(t); parameter D = t
6
= f(I
DS
10
); parameter V
8
D
); parameter V
VDS / V
5
ID / A
1E-03
t / s
10
20
BUK436W-200A/B
20
P
D
12
VGS / V =
Product Specification
t
p
14
T
5.5
1E-01
VGS / V =
30
GS
BUK456-200A
BUK456-200A
7
D =
16
GS
p
BUKx56-lv
/T
j
t
T
p
j
t
= 25 ˚C .
= 25 ˚C .
18
Rev 1.000
1E+01
6
10
6
5
4
7
20
40