BUK101-50 Philips Semiconductors, BUK101-50 Datasheet - Page 5

• Manufacturer Part Number: BUK101-50
• Description: PowerMOS transistor Logic level TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ENVELOPE CHARACTERISTICS
April 1993
PowerMOS transistor
Logic level TOPFET
SYMBOL PARAMETER
L
L
L
d
d
s
I
D
% = 100 I
Fig.3. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.2. Normalised power dissipation.
0
0
PD%
ID%
P
Internal drain inductance
Internal drain inductance
Internal source inductance
D
D
% = 100 P
/I
20
20
D
(25 ˚C) = f(T
40
40
D
60
60
/P
Tmb / C
Tmb / C
D
(25 ˚C) = f(T
mb
Normalised Current Derating
80
80
Normalised Power Derating
); conditions: V
100
100
120
120
mb
)
140
140
IS
CONDITIONS
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
= 5 V
5
1000
100
0.01
10
0.1
10
1
1
I
1E-07
D
1
ID & IDM / A
Zth / (K/W)
& I
Fig.4. Safe operating area. T
D =
0.05
0.02
Fig.5. Transient thermal impedance.
0.5
0.2
0.1
DM
0
Z
= f(V
th j-mb
1E-05
Overload protection characteristics not shown
DS
= f(t); parameter D = t
DC
); I
10
DM
MIN.
single pulse; parameter t
-
-
-
1E-03
t / s
VDS / V
P
D
TYP.
3.5
4.5
7.5
BUK101-50DL
Product specification
t
p
T
100
1E-01
tp =
100 ms
mb
100 us
10 ms
1 ms
MAX.
= 25 ˚C
BUK101-50DL
p
D =
/T
-
-
-
t
T
BUK101-50DL
p
t
Rev 1.100
1E+01
UNIT
nH
nH
nH
p