SEP8505 Honeywell, SEP8505 Datasheet - Page 3

• Manufacturer Part Number: SEP8505
• Description: GaAs Infrared Emitting Diode
• Manufacturer: Honeywell

Fig. 1
Fig. 3
Fig. 5
SEP8505
GaAs Infrared Emitting Diode
38
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-40
0
-30
890
Angular displacement - degrees
-20
Forward current - mA
910
Wavelength - nm
20
-10
930
0
950
+10 +20 +30 +40
40
970
990 1010
gra_027.ds4
gra_003.ds4
gra_005.ds4
60
Fig. 2
Fig. 4
Fig. 6
10.0
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
5.0
2.0
1.0
0.5
0.2
0.1
0.7
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8405
7
4
2
1
10
-40
0.01
Lens-to-lens separation - inches
0.02 0.04
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
0.1
I
T
V
F
A
30
35
CE
= 25 mA
= 25 °C
0.2
= 5 V
40 50
60
0.4 0.7 1
gra_028.ds4
gra_207.ds4
gra_029.ds4
100
85