ZVN4306G Zetex Semiconductors, ZVN4306G Datasheet - Page 2

• Manufacturer Part Number: ZVN4306G
• Description: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
• Manufacturer: Zetex Semiconductors

ZVN4306G
Normalised R
400
500
300
200
100
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Capacitance v drain-source voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
1
-50 -25
V
Saturation Characteristics
10
DS
V
2
- Drain Source Voltage (Volts)
V
20V 12V
DS
GS=
20
Gate Threshold Voltage V
DS(on)
-Drain Source Voltage (Volts)
T
0 25 50 75 100
3
j
-Junction Temperature (°C)
10V
4
30
and V
TYPICAL CHARACTERISTICS
5
9V
40
8V
6
GS(th)
50
125
7
v Temperature
GS(TH)
150
60
C
C
8
C
iss
oss
rss
175 200
V
I
V
I
D=
D=
9
GS=
70
GS=
3A
1mA
10V
V
10
DS
7V
225
6V
5V
4V
3.5V
3V
80
3 - 412
1.0
0.1
10
0.1
14
12
10
16
5
4
3
1
2
8
6
4
2
0
Gate charge v gate-source voltage
On-resistance v drain current
0
Transconductance v drain current
0
0
V
GS
1
2
=3V
I
D-
2
I
I
D(on)
Drain Current (Amps)
D=
4
3A
3
3.5V
1
- Drain Current (Amps )
6
4
Q-Charge (nC)
8
V
5
DS=
5V
10
6
10V
6V
7
10
12
8V
8
V
40V
60V
14
20V
DD
9
10V
=
16
10 11 12
18
100
20