AON2409 Alpha & Omega Semiconductors, AON2409 Datasheet - Page 2

• Manufacturer Part Number: AON2409
• Description: 30V P-Channel MOSFET
• Manufacturer: Alpha & Omega Semiconductors

Rev 1 : Nov 2011
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
t
Q
A. The value of R
Power dissipation P
application depends on the user's specific board design.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
J
=25°C.
JA
is the sum of the thermal impedance from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
DSM
is measured with the device mounted on 1in
is based on R
D
is based on T
Parameter
J
J(MAX)
=25° C unless otherwise noted)
JA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
www.aosmd.com
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V =-10V, V =-15V, R =1.8 ,
V
R
I
D
S
F
F
2
J(MAX)
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-8A, dI/dt=500A/ s
=-8A, dI/dt=500A/ s
=-250 A, V
=-1A,V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
=-30V, V
=0V, V
=V
=-10V, V
=-10V, I
=-4.5V, I
=-5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3
=150°C. Ratings are based on low frequency and duty cycles to keep
GS
JC
www.DataSheet.co.kr
, I
GS
and case to ambient.
GS
D
DS
DS
D
=0V
=-8A
D
=-250 A
D
GS
= ±20V
DS
=-15V, f=1MHz
=0V, f=1MHz
DS
DS
=-8A
GS
=-6A
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
T
=-8A
L
T
J
=1.8 ,
=125° C
J
=55° C
Min
-1.1
-30
-32
33.6
-1.75
26.3
11.5
26.5
530
114
12.2
25.4
Typ
-0.7
7.7
5.5
5.5
75
11
1.8
42
20
12
6
3
A
=25°C.
A
±100
=25°C. The
Max
14.5
-2.3
41
3.5
7.5
-5
32
53
22
-1
-1
AON2409
Page 2 of 5
Units
m
m
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
S
V
A
A
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