ECH8620 Sanyo Semicon Device, ECH8620 Datasheet - Page 5
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ECH8620
Manufacturer Part Number
ECH8620
Description
N-Channel and P-Channel Silicon MOSFETs
Manufacturer
Sanyo Semicon Device
Datasheet
1.ECH8620.pdf
(6 pages)
1000
1000
0.01
100
100
1.0
1.0
0.1
10
10
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
0
Ta=25 °C
Single pulse
Mounted on a ceramic board (900mm
V DS =50V
I D =2A
Operation in this
area is limited by R DS (on).
1
2
2
2
3
3
5
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
3
5 7
Total Gate Charge, Qg -- nC
4
1.0
Drain Current, I D -- A
10
SW Time -- I D
0.1
5
V GS -- Qg
2
6
A S O
3
2
Ciss
15
7
5 7
3
8
2
✕0.8mm) 1unit
5 7
10
9
20
1.0
2
10
3
11
PW ≤10µs
V DD =50V
V GS = 10 V
2
5 7
25
f=1MHz
12
3
100
IT10626
IT10627
IT10628
IT10629
[Nch]
[Nch]
[Nch]
[Nch]
13
5 7
30
14
ECH8620
2
--0.01
1000
1000
--1.0
--0.1
100
100
--10
--
1.0
10
--
--
--
--
--
--
--
--
--
10
--
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.01
0
0
Ta=25 °C
Single pulse
Mounted on a ceramic board (900mm
V DS = -- 50V
I D = --1.5 A
1
Operation in this
area is limited by R DS (on).
2
2
2
3
--5
3
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
3
5 7
5 7
Total Gate Charge, Qg -- nC
4
--1.0
Drain Current, I D -- A
--10
--
SW Time -- I D
5
0.1
V GS -- Qg
2
6
A S O
3
2
7
--15
5 7
3
8
2
--10
✕0.8mm) 1unit
5 7
9
--20
10
--
2
1.0
11
3
V DD = --50V
V GS = --10V
12
No. A0659-5/6
2
PW ≤10µs
--25
5 7
f=1MHz
13
3
--100
IT10615
IT10616
IT10617
IT10618
[Pch]
[Pch]
[Pch]
[Pch]
14
5 7
--30
15
2