CPH5809 Sanyo Semicon Device, CPH5809 Datasheet
CPH5809
Manufacturer Part Number
CPH5809
Description
DC/DC Converter Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.CPH5809.pdf
(5 pages)
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Ordering number : ENN7267
Preliminary
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Marking : QK
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
•
•
The CPH5809 composite device consists of follow-
ing two devices to facilitate high-density mounting.
One is an N-channel MOSFET that features low ON-
resistance, ultrahigh-speed switching, and low driving
voltage. The other is a schottky barrier diode that
features short reverse recovery time and low forward
voltage.
Each device incorporated in the CPH5809 is equiva-
lent to the MCH3411 and to the SBS005, respectively.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
V RRM
V RSM
V DSS
V GSS
I FSM
Tstg
Tstg
I DP
Tch
P D
I D
I O
Tj
PW 10 s, duty cycle 1%
Mounted on a ceramic board (600mm
50Hz sine wave, 1 cycle
CPH5809
DC / DC Converter Applications
Package Dimensions
unit : mm
2171
Conditions
1
5
0.95
MOSFET : N-Channel Silicon MOSFET
2
2.9
0.8mm) 1unit
4
3
2
0.4
0.4
[CPH5809]
SBD : Schottky Barrier Diode
83002 TS IM TA-3482
Ratings
0.15
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
CPH5809
--55 to +125
--55 to +125
--55 to +125
0.05
150
0.9
10
30
12
30
30
10
3
1
No.7267-1/5
Unit
W
V
V
A
A
V
V
A
A
C
C
C
C
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CPH5809 Summary of contents
Page 1
... The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equiva- • lent to the MCH3411 and to the SBS005, respectively. Specifications Absolute Maximum Ratings at Ta=25 C ...
Page 2
... V R =10V, f=1MHz cycle =100mA, see specified Test Circuit. Rthj-a Mounted on a ceramic board (600mm 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode (Top view Test Circuit [SBD] Duty 10% V OUT 10 s CPH5809 Ratings min typ max 0.4 1.3 3.5 5 118 ...
Page 3
... Drain Current Time -- I D 100 (on 0.1 1.0 Drain Current CPH5809 [MOSFET =1.0V 0 0.8 0.9 1.0 0 0.25 IT04632 [MOSFET] 150 Ta=25 C 125 100 --60 --40 IT04634 ...
Page 4
... Reverse Voltage 1000 100 1 1.0 10 Reverse Voltage CPH5809 [MOSFET 1 0 Ta= Single pulse 2 Mounted on a ceramic board(600mm 0.01 3.0 3.5 4 0.01 IT04640 [MOSFET] 1 ...
Page 5
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. CPH5809 PS No.7267-5/5 ...