AO4900A Alpha & Omega Semiconductors, AO4900A Datasheet

no-image

AO4900A

Manufacturer Part Number
AO4900A
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4900A
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900A uses advanced trench technology to
provide excellent R
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4900A is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
AO4900A and AO4900AL are electrically identical.
S2/A
G2
S1
G1
SOIC-8
1
2
3
4
DS(ON)
B
8
7
6
5
B
A
and low gate charge. The
C
C
D2/K
D2/K
D1
D1
A
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
T
T
T
T
T
T
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
Symbol
Symbol
G2
T
J
Features
V
I
R
R
R
SCHOTTKY
V
R
R
D
V
R
R
V
V
, T
I
I
P
DS
DS
DM
DS(ON)
DS(ON)
DS(ON)
I
I
FM
θJA
θJA
GS
θJL
θJL
DS
D
KA
F
= 6.9A (V
D
STG
(V) = 30V
(V) = 30V, I
D2
S2
< 27mΩ (V
< 32mΩ (V
< 50mΩ (V
-55 to 150
GS
MOSFET
K
A
1.44
47.5
= 10V)
Typ
±12
6.9
5.8
30
40
55
90
40
71
32
F
2
G1
= 3A, V
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
F
D1
S1
=0.5V@1A
-55 to 150
Schottky
1.44
Max
62.5
62.5
110
110
30
40
48
40
3
2
2
Units
Units
°C/W
°C/W
°C
W
V
V
A
V
A

Related parts for AO4900A

AO4900A Summary of contents

Page 1

... DC- DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pb- www.DataSheet4U.com free (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical. S2/A D2 ...

Page 2

... AO4900A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance www.DataSheet4U.com FS V Diode Forward Voltage ...

Page 3

... AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 4. (Volts) DS Fig 1: On-Region Characteristics www.DataSheet4U.com =2. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 125° THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 25° ...

Page 4

... AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =6. (nC) g Figure 7: Gate-Charge Characteristics www.DataSheet4U.com 100.0 R DS(ON) limited 10.0 1.0 DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θJA 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL ...

Page 5

... AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125°C 1 0.1 0.01 25°C 0.001 0.0 0.2 0.4 V (Volts) F Figure 12: Schottky Forward Characteristics www.DataSheet4U.com 0.7 0.6 0.5 0.4 I =1A F 0.3 0.2 0 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D θJA J, =62.5°C/W θJA 1 0.1 0.01 0.00001 0.0001 Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & ...

Related keywords