AO4815 Alpha & Omega Semiconductors, AO4815 Datasheet

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AO4815

Manufacturer Part Number
AO4815
Description
Dual P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4815
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4815 uses advanced trench technology to
provide excellent R
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard Product AO4815
is Pb-free (meets ROHS & Sony 259 specifications).
AO4815L is a Green Product ordering option.
AO4815 and AO4815L are electrically identical.
AO4815
Dual P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S2
G2
S1
G1
B
T
T
T
T
SOIC-8
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, and ultra-low low gate
1
2
3
4
C
8
7
6
5
A
A
A
=25°C unless otherwise noted
D2
D2
D1
D1
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
ESD Rating: 2KV HBM
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJL
= -8A (V
(V) = -30V
G1
< 18mΩ (V
< 20mΩ (V
Maximum
-55 to 150
GS
1.44
±25
-6.9
Typ
-30
-40
50
73
31
-8
2
= -20V)
D1
S1
GS
GS
= -20V)
= -10V)
G2
Max
62.5
110
40
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4815 Summary of contents

Page 1

... This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4815 is Pb-free (meets ROHS & Sony 259 specifications). AO4815L is a Green Product ordering option. AO4815 and AO4815L are electrically identical ...

Page 2

... AO4815 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -6V -10V -5V 20 -4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...

Page 4

... AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 1s 10s T =150°C J(Max) T =25° 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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