AO4609 Alpha & Omega Semiconductors, AO4609 Datasheet - Page 3

• Manufacturer Part Number: AO4609
• Description: Complementary Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductors

AO4609
Alpha & Omega Semiconductor, Ltd.
P-Channel Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
DS(ON)
SD
iss
oss
rss
g
g
gs
gd
rr
DSS
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
GS
DS
GS
GS
GS
GS
=-3A, dI/dt=100A/µs
=-3A, dI/dt=100A/µs
=-250µA, V
=-1A,V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
=-24V, V
=0V, V
=V
=-5V, I
=-4.5V, V
=-10V, I
=-4.5V, I
=-2.5V, I
=0V, V
=0V, V
=-4.5V, V
=-10V, V
=3Ω
GS
θJL
GS
and lead to ambient.
I
D
D
GS
DS
DS
=0V
=-250µA
=-3A
D
D
D
GS
DS
=±12V
=-3A
=-15V, f=1MHz
=0V, f=1MHz
GS
DS
DS
=-2A
=-1A
=0V
=-15V, R
=0V
=-5V
=-15V, I
T
D
L
T
J
=-3A
=5Ω,
=125°C
J
=55°C
Min
-0.6
-30
-10
3
-0.85
1.32
31.5
15.8
Typ
102
154
128
187
409
4.5
4.4
0.8
5.3
4.4
55
42
12
-1
8
8
A
=25°C. The
A
=25°C. The
±100
Max
-1.4
130
200
180
260
-1
-5
-1
-2
Units
mΩ
mΩ
mΩ
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
Ω