SSM6J21TU Toshiba Semiconductor, SSM6J21TU Datasheet - Page 4

• Manufacturer Part Number: SSM6J21TU
• Description: High Current Switching Applications
• Manufacturer: Toshiba Semiconductor

www.DataSheet4U.com
-0.03
-0.01
-0.3
-0.1
-30
-10
-3
-1
-10
-8
-6
-4
-2
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
0
0
Common Source
V GS = 0
Ta = 25°C
G
Drain-Source voltage V
0.2
Total gate charge Q
Dynamic Input Characteristic
-10
Drain current I
10
D
S
0.4
V DD = -10V
|Y
I
DR
I
DR
fs
-100
| – I
0.6
– V
D
20
DS
D
Common Source
V DS = -3V
Ta = 25°C
(mA)
Common Source
I D = -3 A
Ta = 25°C
0.8
g
-1000
DS
(nC)
(V)
1
30
-10000
1.2
35
4
10000
5000
3000
1000
1000
500
300
100
100
50
30
10
10
0.01
-0.1
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
t on
t r
Drain-Source voltage V
t f
Drain current I
t off
0.1
-1
C – V
t – I
D
DS
D
-10
1
Common Source
V DD = -10 V
V GS = 0∼-2.5V
Ta = 25°C
R G = 4.7 Ω
(A)
C iss
C oss
C rss
DS
SSM6J21TU
(V)
2007-11-01
-100
10