SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet - Page 2
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SSM6J08FU
Manufacturer Part Number
SSM6J08FU
Description
Power Management Switch
Manufacturer
Toshiba Semiconductor
Datasheets
1.SSM6J08FU.pdf
(6 pages)
2.SSM6J08FU.pdf
(6 pages)
3.SSM6J08FU.pdf
(6 pages)
4.SSM6J08FU.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA
Quantity:
51 000
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics
Precaution
Switching Time Test Circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
(a) Test circuit
for this product. For normal switching operation, V
requires lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
th
−2.5 V
can be expressed as voltage between gate and source when low operating current value is I
0
V
R
D.U. < = 1%
V
COMMON SOURCE
Ta = 25°C
Characteristic
DD
IN
G
10 μs
: t
= 4.7 Ω
= −10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
R
G
th
I
(Ta = 25°C)
D
.
V
V
R
Symbol
V
(BR) DSS
(BR) DSX
DS (ON)
⏐Y
OUT
I
I
C
C
DD
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
⏐
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS (off)
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −1 mA, V
= −0.65 A, V
= −0.65 A, V
= −0.65 A, V
= −20 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= ±12 V, V
= −10 V, I
= 0~−2.5 V, R
GS (on)
2
OUT
IN
< V
Test Condition
D
D
th
GS
GS
requires higher voltage than V
D
GS
GS
GS
GS
= −0.1 mA
= −0.65 A
GS
GS
GS
DS
< V
= −0.65 A,
= 0
= 12 V
= −4 V
= −2.5 V
= −2.0 V
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
GS (on)
= 4.7 Ω
V
DS (ON)
−2.5 V
)
V
0 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
DD
−0.5
Min
−20
1.3
−8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10%
t
on
t
r
10%
th
Typ.
90%
140
200
260
370
116
2.7
73
33
47
⎯
⎯
⎯
⎯
⎯
and V
SSM6J08FU
90%
t
2007-11-01
D
off
GS (off)
−1.1
Max
180
260
460
t
±1
−1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
f
= −100 μA
Unit
mΩ
μA
μA
pF
pF
pF
ns
ns
V
V
S