SSM3K7002F Toshiba Semiconductor, SSM3K7002F Datasheet
SSM3K7002F
Manufacturer Part Number
SSM3K7002F
Description
High-Speed Switching Applications
Manufacturer
Toshiba Semiconductor
Datasheet
1.SSM3K7002F.pdf
(5 pages)
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High-Speed Switching Applications
Analog Switch Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
Small package
Low ON-resistance
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
Turn-on delay time
Turn-off delay time
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
: R
: R
: R
DC
Pulse
on
on
on
= 3.3 Ω (max) (@V
= 3.2 Ω (max) (@V
= 3.0 Ω (max) (@V
(Ta = 25°C)
SSM3K7002F
(Ta = 25°C)
Symbol
V
V
T
I
T
P
GSS
V
DP
I
DS
stg
R
D
ch
D
Symbol
(BR) DSS
DS (ON)
⎪Y
td
td
I
I
C
C
C
GSS
DSS
V
oss
(on)
(off)
rss
iss
th
fs
GS
GS
GS
⎪
= 4.5 V)
= 5 V)
= 10 V)
−55 to 150
V
I
V
V
V
I
I
I
V
V
V
D
D
D
D
Rating
GS
DS
DS
DS
DS
DD
GS
± 20
200
800
200
150
60
= 0.1 mA, V
= 500 mA, V
= 100 mA, V
= 100 mA, V
1
= 60 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ± 20 V, V
= 30 V , I
= 0 to 10 V
Test Condition
D
D
GS
GS
GS
GS
GS
GS
= 0.25 mA
= 200 mA
D
DS
Unit
mW
mA
°C
°C
V
V
= 0
= 0, f = 1 MHz
= 200 mA ,
= 0
= 10 V
= 5 V
= 4.5 V
= 0
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
S-MINI
Min
170
1.0
⎯
⎯
⎯
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM3K7002F
Typ
2.0
2.1
2.2
1.4
5.8
2.4
17
26
1
2
⎯
⎯
⎯
⎯
⎯
TO-236MOD
1.5-0.15
1.Gate
2.Source
3.Drain
2.5-0.3
+0.25
2-3F1F
+0.5
SC-59
2007-11-01
Max
± 10
2.5
3.0
3.2
3.3
4.0
⎯
40
⎯
⎯
⎯
⎯
1
3
Unit: mm
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V
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SSM3K7002F Summary of contents
Page 1
... (ON 100 mA iss = rss DS C oss (on (off) 1 SSM3K7002F +0.5 2.5-0.3 +0.25 1.5-0. Unit 1.Gate 2.Source mW 3.Drain S-MINI °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Test Condition Min Typ = 0 ⎯ ...
Page 2
... V IN OUT (c) V OUT V DD Equivalent Circuit 2 1 requires a higher voltage than V GS (on) < (off SSM3K7002F (ON (on) td (off) (top view) ...
Page 3
... DS D Common Source °C 5 100 1000 (mA (ON 1.8 1.6 1.4 1.2 0.8 5 100 500 mA 0.6 0.4 0 100 125 150 3 SSM3K7002F Common Source VDS = 100 °C 25 ° ° Gate-Source Voltage V ( (ON Common Source I = 100 100 ° ...
Page 4
... Common Source VGS = MHz 1000 °C Ciss Coss Crss 1 10 100 ( 100 120 140 160 4 SSM3K7002F Common Source 900 VGS = 0 V 800 °C 700 D 600 G IDR 500 400 S 300 200 100 0 0 -0.2 -0 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K7002F 20070701-EN GENERAL 2007-11-01 ...