SSM3K01F Toshiba Semiconductor, SSM3K01F Datasheet

SSM3K01F

Manufacturer Part Number

SSM3K01F

Description

High Speed Switching Applications

Manufacturer

Toshiba Semiconductor

Datasheets

1.SSM3K01F.pdf (5 pages)

2.SSM3K01F.pdf (5 pages)

3.SSM3K01F.pdf (5 pages)

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High Speed Switching Applications

•

Absolute Maximum Ratings

Marking

Handling Precaution

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

Small package

Low on resistance : Ron = 120 mΩ (max) (V

Low gate threshold voltage: V

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

: Ron = 150 mΩ (max) (V

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Pulse

= 0.6~1.1 V (V

(Ta = 25°C)

Symbol

SSM3K01F

GSS

stg

= 4 V)

= 2.5 V)

= 3 V, I

−55~150

Rating

±10

200

150

1.3

2.6

Equivalent Circuit

= 0.1 mA)

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-236MOD

SSM3K01F

2-3F1F

SC-59

2007-11-01

Unit: mm

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