SSM3J16FV Toshiba Semiconductor, SSM3J16FV Datasheet - Page 3

• Manufacturer Part Number: SSM3J16FV
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

www.DataSheet4U.com
-250
-200
-150
-100
-50
25
20
15
10
0
5
0
-1
0
40
35
30
25
20
15
10
−25
5
0
Common Source
Drain - Source voltage VDS (V)
0
-0.5
Drain current I
Ambient temperature Ta (°C)
-10
25
R
DS (ON)
-10
V GS = -1.5 V
I
D
R
DS (ON)
– V
V GS =−1.5 V, ID=-1mA
-2.5 V
50
-1
-4 V
DS
-2.5 V, -10mA
– I
-4
D
D
75
-100
– Ta
(mA)
Common Source
Ta = 25°C
-4V, -10mA
-3
-1.5
100
V GS = -1.5 V
125
-2.7
-2.5
-2.3
-2.1
-1.9
-1.7
-1000
-2
150
3
-1000
-0.01
-100
-0.1
1.8
1.6
1.4
1.2
-1.8
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
-10
20
10
.4
-1
8
6
2
-2
-1
0
−25
0
0
0
Common Source
V DS = -3 V
Common Source
I D = -0.1 mA
V DS = -3 V
25°C
Ta = 100°C
0
Gate - Source voltage VGS (V)
Gate - Source voltage VGS (V)
-2
Ambient temperature Ta (°C)
-1
R
25
DS (ON)
−25°C
-4
I
50
V
D
Ta=100℃
th
– V
– V
-2
– Ta
GS
75
GS
-6
Common Source
I D = -1 mA
-25℃
100
-3
25℃
-8
SSM3J16FV
125
2007-11-01
-10
150
-4