STC20DE90HV ST Microelectronics, STC20DE90HV Datasheet - Page 4

• Manufacturer Part Number: STC20DE90HV
• Description: Hybrid Emitter Switched Bipolar Transistor
• Manufacturer: ST Microelectronics

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4
Electrical characteristics
2
4/11
(T
Table 4.
Electrical characteristics
case
Symbol
V
V
V
Q
I
I
I
I
V
CS(SS)
BS(OS)
SB(OS)
GS(OS)
CS(dyn)
CS(ON)
BS(ON)
GS(tot)
h
GS(th)
C
t
t
FE
t
t
iss
s
s
f
f
= 25°C unless otherwise specified)
Collector-source current
(V
Base-source current
(I
Source-base current
(I
Gate-source leakage
(V
Collector-source ON
voltage
DC current gain
Base-source ON
voltage
Gate threshold voltage
Input capacitance
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(500ns)
Electrical characteristics
C
C
BS
BS
=0, V
=0, V
=V
=0V)
Parameter
GS
GS
GS
=0V)
=0V)
=0V)
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
t
C
C
B
peak
CS(SS)
BS(OS)
SB(OS)
GS
GS
GS
CS
CS
GS
GS
BS
CS
GS
CS
CB
GS
Clamp
GS
Clamp
CC
GS
= 2A
=10A
=10A
=25V
=0V
=V
=V
=1V
=1V
=25V
=
=10V
=10V
=10V I
=10V I
=10V
=10V
=V
=10V
=500ns
±
CB
GS
=720V
=720V
Clamp
Test Conditions
=900V
=30V
=9V
20V
=0V
V
V
C
C
I
I
GS
GS
C
C
=400V
=20A
=10A
=20A
=10A
=10V I
=10V I
I
f =1MHz
V
I
B
C
GS
=250µA
=20A
R
t
R
I
I
p
t
R
I
I
C
Bpeak
p
=10V
B
B
G
=4µs
G
G
=4µs
=2A
=1A
=10A
I
I
=47Ω
I
I
B
B
=47Ω
=47Ω
C
B
B
C
=4A
=1A
=20A
=4A
=1A
=10A
=10A
Min.
1.5
Typ.
0.65
12.5
750
775
510
1.2
1.8
1.2
2.2
2.3
12
4
7
5
STC20DE90HV
Max.
100
100
500
10
3
Unit
µA
µA
µA
nA
pF
nC
ns
ns
ns
ns
V
V
V
V
V
V