SP8M4 Rohm, SP8M4 Datasheet

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SP8M4

Manufacturer Part Number
SP8M4
Description
Switching
Manufacturer
Rohm
Datasheet

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Transistors
Switching
SP8M4
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
∗MOUNTED ON A CERAMIC BOARD.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Features
Application
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
GSS
I
DSS
DP
I
SP
Rth (ch-a)
D
S
D
Symbol
Nchannel
±9.0
±36
1.6
30
20
36
−55 to +150
Limits
Limits
150
62.5
2
Pchannel
±7.0
−1.6
−30
−20
±28
−28
External dimensions (Unit : mm)
SOP8
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1
∗1
∗2
∗A protection diode is included between the gate and
∗2
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
(8)
(1)
1.27
5.0±0.2
∗1
(7)
(2)
0.1
Each lead has same dimensions
0.4±0.1
∗2
(6)
(3)
∗1
Rev.A
0.2±0.1
(5)
(4)
www.DataSheet4U.com
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
SP8M4
1/5

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SP8M4 Summary of contents

Page 1

... Use the protection circuit when the fixed voltages are exceeded. Limits Unit ∗ ° 62.5 www.DataSheet4U.com SP8M4 5.0±0.2 0.2±0.1 0.4±0.1 1.27 0.1 Each lead has same dimensions (8) (7) (6) ...

Page 2

... R G − 15V DD − − =5V 3 − − =9.0A 6 Min. Typ. Max. Unit Conditions − − =6.4A, V =0V 1 www.DataSheet4U.com SP8M4 =0V =0V ∗ ∗ ∗ ∗ ∗ 15V ∗ ∗ ∗ ∗ ∗ ∗ ∗ Rev.A 2/5 ...

Page 3

... V GS − − = −7. Min. Typ. Max. Unit Conditions − − −1.2 = −1.6A www.DataSheet4U.com SP8M4 =0V DS =0V = −1mA ∗ = −10V ∗ = −4.5V ∗ = −4.0V ∗ = −10V ∗ −15V ∗ ∗ ∗ ∗ ∗ ∗ ∗ =0V Rev.A ...

Page 4

... Gate-Source Voltage 1000 =4. Pulsed Ta=125°C Ta=75°C Ta=25°C 100 Ta= −25° 0 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) www.DataSheet4U.com SP8M4 10 Ta=25°C =15V = =10Ω Pulsed ...

Page 5

... On-State Resistance vs. Gate-Source Voltage 1000 = −4. Pulsed Ta=125°C 100 Ta=75°C Ta=25°C Ta= −25° DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) www.DataSheet4U.com SP8M4 8 Ta=25°C = −15V − =10Ω Pulsed ...

Page 6

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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