BSS159 Siemens Semiconductor Group, BSS159 Datasheet - Page 2

• Manufacturer Part Number: BSS159
• Description: SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage
V
Drain-source cutoff current
V
V
On-state drain current
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
DS
DS
DS
GS
GS
GS
= 3 V, I
= 50 V, V
= 50 V, V
= -10 V, I
= 0 V, V
= 20 V, V
= 0 V, I
D
D
DS
= 10 µA
GS
GS
= 0.07 A
D
DS
= 250 µA
= 10 V
= -10 V, T
= -10 V, T
= 0 V
j
j
= 25 °C
= 125 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
I
R
DSV
D(on)
GSS
(BR)DSV
GS(th)
DS(on)
min.
-
-
-
-
50
-3
70
Values
typ.
-
-
-
-2.5
200
10
4
Preliminary data
max.
-
-
-
-1.5
1
100
8
May-30-1996
BSS 159
Unit
V
µA
mA
nA