BSS135 Siemens Semiconductor Group, BSS135 Datasheet - Page 6

• Manufacturer Part Number: BSS135
• Description: SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
• Manufacturer: Siemens Semiconductor Group

Gate threshold voltage
parameter:
Drain current
parameter:
Semiconductor Group
V
V
DS
GS
I
= 3 V,
D
=
3 V
f
(
T
I
A
D
)
= 1 mA, (spread)
V
GS(th)
=
f
(
T
j
)
6
Forward characteristics of reverse diode
I
parameter:
Drain-source breakdown voltage
V
F
(BR) DSS
=
f
(
V
SD
=
)
b V
t
p
= 80 s,
(BR)DSS
(25 ˚C)
T
j
,
(spread)
BSS 135